PART |
Description |
Maker |
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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MICROSEMI CORP-LOWELL Microsemi Corporation
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KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
|
Coilcraft, Inc.
|
MA840 MA2C840 |
Variable Capacitance Diodes VHF-UHF BAND, 13.25 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
PANASONIC CORP Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE 30 V, SILICON, VARIABLE CAPACITANCE DIODE VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
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1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB From old datasheet system
|
NXP Semiconductors N.V. Philipss Philips Semiconductors
|
MA30W-A MA30W-B MA30-A MA30 MA30-B |
Silicon epitaxial planer type variable resistor SILICON, STABISTOR DIODE
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
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NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
KV1471K KV1471KA KV1471KTR |
VARIABLE CAPACITANCE DIODE UHF BAND, 35.6 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
|
TOKO, Inc. TOKO Inc TOKO[TOKO, Inc]
|
BB142 BB142115 |
4.6 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
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